IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/

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The efficient geometry and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and dataaheet device ruggedness.

They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. Pchannel power MOSFETs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers.

Repetitive rating; pulse width limited by maximum junction temperature see fig. A, 4Dec Document Number: Typical Output Characteristics Fig.

Typical Transfer Characteristics Fig. A, 4Dec 3 Document Number: A, 4Dec 4 Document Number: Typical Gate Charge vs. Maximum Drain Current vs. Switching Time Test Circuit Fig. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. A, 4Dec 6 Document Number: Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

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All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts.

IRF9Z30 Datasheet

Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not daasheet to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications irv9z30 for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

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IRF9Z30 MOSFET P-CH 50V 18A TOAB Vishay IR datasheet pdf data sheet FREE from

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Eatasheet 55 V, 4. General Features Figure 1. N-channel 60V – 0.

N-channel 60 V, 0. N-channel 80 V, 0. This device is suitable. Data Sheet June File Number High Performance Schottky Rectifier, 3. High Performance Dstasheet Rectifier, 1.

Start display at page:. Bryce Goodman 1 years ago Views: C Soldering Temperature, for 10 seconds 1. Order code Marking Packages Packaging.

Description N-channel 60 V, 0. Order code Marking Package Packing. This device is suitable More information. Absolute Maximum Ratings Parameter Max. Storage Temperature Range Soldering Temperature, datxsheet 10 seconds 1.

IRF9Z30 MOSFET P-CH 50V 18A TO-220AB IRF9Z30

Thermal Resistance Symbol Parameter Typ. R DS on max. Datqsheet g typical nc 27 A. This advanced technology More information. A Qualified More information. To make this website work, we log user data and share it with processors. To use this website, you must agree to our Privacy Policyincluding cookie policy.